Herbst, J. F. Physics Department, General Motors Research Laboratories, Warren, Michigan.
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The change of electrical resistance produced in a current-carrying conductor or semiconductor on application of a magnetic field H. Magnetoresistance is one of the galvanomagnetic effects. It is observed with H both parallel to and transverse to the current flow. The change of resistance usually is proportional to H2 for small fields, but at high fields it can rise faster than H2, increase linearly with H, or tend to a constant (that is, saturate), depending on the material. In most nonmagnetic solids the magnetoresistance is positive. See also: Galvanomagnetic effects
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