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Bulk semiconductor materials such as silicon, gallium arsenide (GaAs), and indium phosphide (InP) have a continuum of electronic states within...


= Encyclopedia Article; = Research Update
Figure 1.Atomic force microscope surface image (1?×?1 µm) of islands formed after deposition of 2.5 atomic layers of indium phosphide (InP) on gallium indium phosphide (GaInP).
From update 'Quantum-dot lasers'
Figure 2.Indium phosphide (InP) quantum-dot laser diode. (a) Structure. (b) Transmission electron micrograph of gallium indium phosphide (GaInP) waveguide layer with a stack of three layers of InP quantum dots.
From update 'Quantum-dot lasers'
Figure 3.Light emission from indium phosphide (InP) quantum-dot laser diode shown in Fig. 2. (a) Red laser emission emerging from the mirrors of the laser structure. (b) Spectrum of laser output below and above threshold current, jthr. Spectrum below threshold current (j?=?0.58 jthr) is magnified 250 times relative to spectrum above threshold current (j?=?1.06 jthr).
From update 'Quantum-dot lasers'
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